DOI:
https://doi.org/10.14483/22487638.9240Publicado:
2014-12-01Número:
Vol. 18 (2014): Special Edition DoctorateSección:
InvestigaciónSynthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction
Síntesis y caracterización de la heterounión de la interfaz In (O; OH) S / AgInS2
Palabras clave:
Absorber layerthin film, AgInS2, buffer layer, In(O, OH)S, Optic window, solar cells. (en).Descargas
Resumen (en)
In this work,we presented some complementary studies for In(O,OH)S thin films deposited on AgInS2 thin films to fabricate a new system absorbent-layer/buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS2layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition.X-ray diffraction measurements indicated that AgInS2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure.The AgInS2thin films presented p-type conductivity, andfrom tranductance measurements it was found a high absorption coefficient (greater than 104 cm−1) and an energy band gap of 1.95 eV; and In(O,OH),S thin films presented Egabout 3.01 eV;morphological analysis indicated that under this synthesis conditions,In(O,OH)S thin films coated completely the AgInS2absorber layer. Finally, in this work, the Avrami-Erofeev equation was used to study In(O,OH)S thin film growth rate on AgInS2 substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.
Resumen (es)
En este trabajo, presentamos algunos estudios complementarios para las películas delgadas In (O, OH) S depositadas en películas delgadas AgInS2 para fabricar un nuevo sistema de capa absorbente / capa buffer que se utilizará en tándem y / o en células solares de una unión. Como se demostró en trabajos previos llevados a cabo para nosotros, las capas de AgInS2 se cultivaron por co-evaporación a partir de precursores de metal en un proceso de dos pasos; y en (O, OH) S las películas delgadas se depositaron mediante deposición de baño químico. Las mediciones de difracción de rayos X indicaron que la película delgada de AgInS2 crecía con estructura de calcopirita; e In (O, OH) películas S crecidas con estructura policristalina. Las películas delgadas AgInS2 presentaron conductividad de tipo p, y desde las mediciones de tranductancia se encontró un alto coeficiente de absorción (mayor de 104 cm-1) y un intervalo de banda de energía de 1.95 eV ; y en (O, OH), las películas delgadas S presentaron Egabout 3.01 eV, el análisis morfológico indicó que bajo estas condiciones de síntesis, las películas delgadas en (O, OH) S recubrieron completamente la capa absorbente AgInS2. Finalmente, en este trabajo, se utilizó la ecuación de Avrami-Erofeev para estudiar la velocidad de crecimiento de la película fina In (O, OH) S sobre el sustrato AgInS2. Los resultados indican que el sistema desarrollado se puede usar en células solares de unión única y unión múltiple.
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