DOI:

https://doi.org/10.14483/22487638.9240

Publicado:

2014-12-01

Número:

Vol. 18 (2014): Special Edition Doctorate

Sección:

Investigación

Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction

Síntesis y caracterización de la heterounión de la interfaz In (O; OH) S / AgInS2

Autores/as

  • william vallejo Universidad de Atlántico
  • Carlos Díaz Uribe Universidad Industrial de Santander
  • Carlos Andrés Arredondo Universidad de Medellin
  • Mario Alberto Luna Universidad de Medellin
  • Johann Hernández University Distrital Francisco José de Caldas
  • Gerardo Gordillo Universidad Nacional de Colombia

Palabras clave:

Absorber layerthin film, AgInS2, buffer layer, In(O, OH)S, Optic window, solar cells. (en).

Resumen (en)

In this work,we presented some complementary studies for In(O,OH)S thin films deposited on AgInS2 thin films to fabricate a new system absorbent-layer/buffer-layer to be used in tandem and/or in one-junction solar cells. As showed in previous works carried out for us, AgInS2layers were grown by co-evaporation from metal precursors in a two-step process; and In(O,OH)S thin films were deposited by Chemical Bath deposition.X-ray diffraction measurements indicated that AgInS2 thin film grown with chalcopyrite structure; and In(O,OH)S films grown with polycrystalline structure.The AgInS2thin films presented p-type conductivity, andfrom tranductance measurements it was found a high absorption coefficient (greater than 104 cm−1) and an energy band gap of 1.95 eV; and In(O,OH),S thin films presented Egabout 3.01 eV;morphological analysis indicated that under this synthesis conditions,In(O,OH)S thin films coated completely the AgInS2absorber layer. Finally, in this work, the Avrami-Erofeev equation was used to study In(O,OH)S thin film growth rate on AgInS2 substrate. Results indicate that the developed system can be used in single-junction and multiple junction solar cells.

Resumen (es)

En este trabajo, presentamos algunos estudios complementarios para las películas delgadas In (O, OH) S depositadas en películas delgadas AgInS2 para fabricar un nuevo sistema de capa absorbente / capa buffer que se utilizará en tándem y / o en células solares de una unión. Como se demostró en trabajos previos llevados a cabo para nosotros, las capas de AgInS2 se cultivaron por co-evaporación a partir de precursores de metal en un proceso de dos pasos; y en (O, OH) S las películas delgadas se depositaron mediante deposición de baño químico. Las mediciones de difracción de rayos X indicaron que la película delgada de AgInS2 crecía con estructura de calcopirita; e In (O, OH) películas S crecidas con estructura policristalina. Las películas delgadas AgInS2 presentaron conductividad de tipo p, y desde las mediciones de tranductancia se encontró un alto coeficiente de absorción (mayor de 104 cm-1) y un intervalo de banda de energía de 1.95 eV ; y en (O, OH), las películas delgadas  S presentaron Egabout 3.01 eV, el análisis morfológico indicó que bajo estas condiciones de síntesis, las películas delgadas en (O, OH) S recubrieron completamente la capa absorbente AgInS2. Finalmente, en este trabajo, se utilizó la ecuación de Avrami-Erofeev para estudiar la velocidad de crecimiento de la película fina In (O, OH) S sobre el sustrato AgInS2. Los resultados indican que el sistema desarrollado se puede usar en células solares de unión única y unión múltiple.

Biografía del autor/a

william vallejo, Universidad de Atlántico

He received his PhD in Chemistry (solar energy materials and solar cells) in 2011 from Universidad Nacional de Colombia. He is an associate professor of Chemistry program at Universidad del Atlántico from 2012. His main research interest areas are synthesis and characterization of PV Materials.

Carlos Díaz Uribe, Universidad Industrial de Santander

He received his PhD in Chemistry in 2010 from Universidad Industrial de Santander. He is an assistant professor of Chemistry program at Universidad de Atlántico from 2012; currently, he is director of research group in Fotochemistry and Fotobiology.

Carlos Andrés Arredondo, Universidad de Medellin

Electrical Engineer, PhD in Physics (solar energy materials and solar cells) from Universidad Nacional de Colombia. Assistant professor of the energy engineering program at Universidad de Medellín from 2012, and researcher of the Grupo de Investigación en Energía – GRINEN of the same university. The main research interest areas are: PV systems and materials for solar cells, and renewable energy systems implementation
on rural and urban areas. Medellín.

Mario Alberto Luna, Universidad de Medellin

Environmental and Sanitary Engineer, PhD in Environmental Conservation (focused on renewable energy) in 2011 at the Estonian University of Life Sciences from Tartu, Estonia; in 2009 received the master degree in Environmental Sciences and Territory Management at Institute Súperier                 d´Agriculture from Lille, Francia. Researcher/lecturer at Universidad de Medellín since 2012. The interested work area is focused on the implementation of renewable energy systems on urban and rural areas. Medellín.

Johann Hernández, University Distrital Francisco José de Caldas

Electrical Engineer. MSc and PhD degrees in Electrical Engineering from Universidad Nacional de Colombia in 2007 and 2012, respectively. In 2009 he joined the staff of the Department of Electrical Engineering at Universidad Distrital Francisco José de Caldas, where he works currently as Associate Professor and director member of Laboratory in Alternative Energy Sources (LIFAE). His research interests include power quality, photovoltaic systems, distributed generation, microgrids and energy efficiency.

Gerardo Gordillo, Universidad Nacional de Colombia

Bachelor in Physics. MSc in Physics from Universidad Nacional de Colombia in 1974. PhD degree in Electronic-Physics from Stuttgart University, Germany, in 1984. He is currently a professor with the Department of Physics at Universidad Nacional de Colombia. His research fields are thin film photovoltaics devices and photovoltaic generation systems.

Referencias

Albor, M., Aguilar, J., González, M., Ortega, Contreras, G. “Photoluminescence studies of chalcopyrite and orthorhombic AgInS2 thin films deposited by spray pyrolysis technique”,Thin Solid Films,Volume 515, Issue 15, 31 May 2007,pp. 6272–6275

Arredondo, C., Gordillo, G. “Photoconductive and electrical transport properties of AgInSe2 thin films prepared by co-evaporation”. Physica B: Condensed MatterVolume 405, 2010, pp. 3694-3699

Arredondo,C., Vallejo,W., Hernandez,J.,Gordillo,G. “In(O,OH)S/AgInS2 absorbent layer/buffer layer system for thin film solar cells”. 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001988-001991.

Asenjo, B.,Chaparro, A., Gutiérrez, M,Herrero, J,Klaer, J. “Study of CuInS2/buffer/ZnO solar cells, with chemically deposited ZnS-In2S3 buffer layers”,Thin Solid Films, Volume 515, Issue 15, 31 May 2007, pp. 6036-6040

Barreau,N.,Marsillac,S.,Albertini,D.,Bernede,J. “Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD”.Thin Solid Films.Volumes 403–404, 1 February 2002, pp. 331-334

Bayon, R., Guillen, C., Martinez, M., Gutierrez, M.,Herrero, J. “Preparation of Indium Hydroxy Sulfide Inx(OH)ySz Thin Films by Chemical Bath Deposition”. Journal of The Electrochemical Society. Volume 145, Issue 8, 1998, pp. 2775-2779

Bayon, R.,Herrero, J. “Structure and morphology of the indium hydroxysulphide thin films”. Applied Surface Science, Volume 158, Issues 1–2, 1 May 2000, pp. 49-57

Bhattacharya,R.,Ramanathan, K.,Gedvilas, L., Keyes, B. “Cu(In,Ga)Se2 thin-film solar cells with ZnS(O,OH), Zn–Cd–S(O,OH), and CdS buffer layers”Journal of Physics and Chemistry of Solids.Volume 66, Issue 11, November 2005, pp. 1862-1864

Contreras,M.,Nakada,T.,Hongo,M.,Pudov, O., Sites, R. “ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo solar cell with 18.6% efficiency”. 3rdWorld Conference on Phorovoltaics EnergyConversion, Osaka. Japan (2003).

Ennaoui, A., Bar,M.,Klaer,J.,Kropp,T.,Sáez-Araos, R., Lux-Steiner, M. “New Chemical Route for the Deposition of ZnSBuffer Layers: Cd-freeCuInS2-based thin film solar cells with efficiencies above 11%”.20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 2005, pp. 1882

Froment, M., Lincot, D. “Phase formation processes in solution at the atomic level: Metal chalcogenide semiconductors”ElectrochimicaActa, Volume 40, Issue 10, July 1995,pp. 1293-1303.

Goetzberger,A.,Hebling, C.,Schock,H.-W. “Photovoltaic materials, history, status and outlook”, Materials Science and Engineering: R: Reports, Volume 40, Issue 1, 1 January 2003, pp. 1-46

Gracia, M., Rojas, F.,Gordillo, G. “Morphological and optical characterization of SnO2: F thin films deposited by spray pyrolysis” 20th European PV Solar Energy Conference, Barcelona, 2005, pp1874-1877

Green, M., Emery, K., Hishikawa,Y., Warta, W., and E. D. Dunlop. “Solar cell efficiency tables (version 43)”. Progress in Photovoltaics: Research and Applications. Volume 22, Issue 1, January 2014, pp. 1–9,

Hariskos,D.,Spiering,S.,Powalla,M. “Buffer layers inCu(In,Ga)Se2 solar cells and modules”.Thin Solid films.Volumes 480–481, 1 June 2005, pp. 99-109

Huang, C., Sheng, L.,Shafarman, W., Chang, C.,Lambers, E.,Rieth, L., Johnson, J., Kim, S.,Stanbery, B., Anderson, T., Holloway, P. “Study of Cd-free buffer layers using Inx(OH,S)y on CIGS solar cells”Solar Energy Materials & Solar Cells.Volume 69, Issue 2, September 2001, pp. 131-137

Larina, L., Kim,K., Yoon, K., Konagai, M., Ahn,T. “Thin film CIGS-based solar cells with an In-based buffer layer fabricated by chemical bath deposition”3rd World Conference on Photovoltaic Energy and Conversion. Osaka.Japan (2003), Vol.1, pp. 531- 534

Lee, C., Larina, L., Shin, Y., Al-Ammar, E., Ahn, B. “Design of energy band alignment at the Zn1−xMgxO/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells”, Physical Cemistry Chemical Physics. 14 April 2012, Issue 14, pp. 4789-4795

Loferski,J.,Shewchun,J.,Rossler,B.,Bealieu,R.,Piekoszewski,J.,Gorska,M.,Chapman, G. “RF-sputtered CuInSe2 thin films”. Proc. 13th TEEE photovoltaic specialists Conference. Washington D.C, 1978,pp. 190.

Lokhande, C., Ennaoui, A.,Patil, P.,Giersig, M.,Diesner, K., Muller, M.,Tributsch,H.“Chemical bath deposition of indium sulphide thin films: preparation and characterization”.Thin Solid Films.Volume 340, Issues 1–2, 26 February 1999, pp. 18-23

McEvoy, A., Markvart, T.,Castañer, L. Solar Cells: Materials, Manufacture and Operation. Second Edition. Radarweg 29, PO Box 211, 1000 AE Amsterdam, The Netherlands. Elsevier,2013.

Naghavi, N., Hubert,C.,Bermudes,V.,Cavana,B.,Etcheberry,A.,Hariskos,D.,Powalla, M.,Lincot, D.,Kerrec, O. “From CdS to Zn(S,O,OH) : a better understanding of chemical bath deposition parameters and cells properties using electrodeposited CuIn(S,Se)2 and coevaporated Cu(In,Ga)Se2 absorbers”. 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 2006, pp. 1843.

O’Brien, P.,McAleese, J. “Developing an understanding of the processes controlling the chemical bath deposition of ZnS and CdS”. Journal of Materials Chemistry, 1998, 8(11), pp. 2309–2314.

Roth,R., Parker,H., Brower,S.“Synthesis of mercury bismuth sulfide HgBi2S4”Materials Research Bulletin, Volume 8, Issue 7, July 1973, pp. 859–862

Sandoval-Paz, M., Sotelo-Lerma, M., Valenzuela-Ja´uregui, J., Flores-Acosta, M.,Ramírez-Bon, R. “Structural and optical studies on thermal-annealed In2S3 films prepared by the chemical bath deposition technique”,Thin Solid Films,Volume 472, Issues 1–2, 24 January 2005, pp. 5-10

Sankapal, B., Sartale, S., Lokhande, C., Ennaoui, A. “Chemical synthesis of Cd-free wide band gap materials for solar cells”, Solar Energy Materials & Solar Cells. Volume 83, Issue 4, July 2004,pp. 447–458

Sharma, R. P. “Influence of annealing in vacuum on opto-electronic characteristics of solution grown AgInSe2 films”.Indian Journal of Pure & Applied Physics, Volume 33, 1995, pp. 711.

Ueno, Y., Kojima, Y., Sugiura, T., Minoura, H. “Electrodeposition of AgInSe2 films from a sulphate bath”.Thin Solid Films.Volume 189, Issue 1, 1 August 1990, pp. 91-101

Vallejo, W., Clavijo., J. Gordillo, G. “CGS Based Solar Cells with In2S3 Buffer Layer Deposited by CBD and Coevaporation”.Brazilian Journal of Physics, Volume 40, no. 1, March 2010, pp 30-37

Vallejo, W., Hurtado, M., Gordillo, G. “Kinetic study on Zn(O,OH)S thin films deposited by chemical bath deposition”. ElectrochimicaActa,Volume 55, Issue 20, 1 August 2010, pp. 5610-5616

Wang, W., Jiang, Y.,Lan,X., Wang,C., Liu, X., Wang,B., Li,J., Yang,B., Ding.X.“Synthesis of CuInSe2 monodisperse nanoparticles and the nanorings shape evolution via a green solution reaction route” Materials Science in Semiconductor Processing.Volume 15, Issue 5, October 2012, pp. 467-471

Yoshinory,E.,Hamakawa.N. “Formation and Properties of AgInSe2 Thin Films deposited from Alloy Chunks”. Japanese Journal of Applied Physics. Volume 34. Part 1, No. 6A, 15 June 1995, pp. 3260-3265.

Yousfi, E.,Asikainen, T.,Pietu, V.,Cowache, P., Powalla, M., Lincot, D. “Cadmium-free buffer layers deposited by atomic later epitaxy for copper indium diselenide solar cells”,Thin Solid Films, Volumes 361–362, 21 February 2000, pp. 183-186

Zhai,R., Wang,R., Wang, H., Zhu, M., Yan, H. “Kinetic studies on CaWO4 thin films by chemical bath deposition”.Journal of Physics D: Applied Physics. 40 (2007), pp. 4039.

Cómo citar

APA

vallejo, william, Díaz Uribe, C., Arredondo, C. A., Luna, M. A., Hernández, J., y Gordillo, G. (2014). Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction. Tecnura, 18, 30–40. https://doi.org/10.14483/22487638.9240

ACM

[1]
vallejo, william et al. 2014. Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction. Tecnura. 18, (dic. 2014), 30–40. DOI:https://doi.org/10.14483/22487638.9240.

ACS

(1)
vallejo, william; Díaz Uribe, C.; Arredondo, C. A.; Luna, M. A.; Hernández, J.; Gordillo, G. Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction. Tecnura 2014, 18, 30-40.

ABNT

VALLEJO, William; DÍAZ URIBE, Carlos; ARREDONDO, Carlos Andrés; LUNA, Mario Alberto; HERNÁNDEZ, Johann; GORDILLO, Gerardo. Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction. Tecnura, [S. l.], v. 18, p. 30–40, 2014. DOI: 10.14483/22487638.9240. Disponível em: https://revistas.udistrital.edu.co/index.php/Tecnura/article/view/9240. Acesso em: 28 mar. 2024.

Chicago

vallejo, william, Carlos Díaz Uribe, Carlos Andrés Arredondo, Mario Alberto Luna, Johann Hernández, y Gerardo Gordillo. 2014. «Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction». Tecnura 18 (diciembre):30-40. https://doi.org/10.14483/22487638.9240.

Harvard

vallejo, william (2014) «Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction», Tecnura, 18, pp. 30–40. doi: 10.14483/22487638.9240.

IEEE

[1]
william vallejo, C. Díaz Uribe, C. A. Arredondo, M. A. Luna, J. Hernández, y G. Gordillo, «Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction», Tecnura, vol. 18, pp. 30–40, dic. 2014.

MLA

vallejo, william, et al. «Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction». Tecnura, vol. 18, diciembre de 2014, pp. 30-40, doi:10.14483/22487638.9240.

Turabian

vallejo, william, Carlos Díaz Uribe, Carlos Andrés Arredondo, Mario Alberto Luna, Johann Hernández, y Gerardo Gordillo. «Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction». Tecnura 18 (diciembre 1, 2014): 30–40. Accedido marzo 28, 2024. https://revistas.udistrital.edu.co/index.php/Tecnura/article/view/9240.

Vancouver

1.
vallejo william, Díaz Uribe C, Arredondo CA, Luna MA, Hernández J, Gordillo G. Synthesis and characterization of In(O;OH)S/AgInS2 interface heterojunction. Tecnura [Internet]. 1 de diciembre de 2014 [citado 28 de marzo de 2024];18:30-4. Disponible en: https://revistas.udistrital.edu.co/index.php/Tecnura/article/view/9240

Descargar cita

Visitas

182

Dimensions


PlumX


Descargas

Los datos de descargas todavía no están disponibles.
Loading...